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ISS133 Datasheet Preview

ISS133 Datasheet

Switching diode

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Diodes
Switching diode
1SS133
1SS133
!Applications
High speed switching
!Features
1) Glass sealed envelope. (MSD)
2) High speed. (trr=1.2ns Typ.)
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE BAND (YELLOW)
φ0.4±0.1
29.0±1.0
2.7±0.3
ROHM : MSD
EIAJ :
JEDEC : DO-34
29.0±1.0
φ1.8±0.2
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Peak reverse voltage
DC reverse voltage
Peak forward current
VRM
VR
IFM
90
80
400
Mean rectifying current
Surge current (1s)
IO
Isurge
130
600
Power dissipation
P 300
Junction temperature
Storage temperature
Tj 175
Tstg 65~+175
Unit
V
V
mA
mA
mA
mW
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
VF
IR
CT
trr
− − 1.2 V IF=100mA
− − 0.5 µA VR=80V
− − 2 pF VR=0.5V, f=1MHz
− − 4 ns VR=6V, IF=10mA, RL=50




ETC

ISS133 Datasheet Preview

ISS133 Datasheet

Switching diode

No Preview Available !

www.DataSheet4U.com
Diodes
!Electrical characteristics curves (Ta=25°C)
100
50
20
10
5
2
1
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
3000
1000
300
100
30
10
3
0
100˚C
70˚C
50˚C
Ta=25˚C
20 40 60 80 100 120
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
1SS133
3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
3
VR=6V
Irr=1/10IR
2
1
0
0 10 20 30
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
characteristics
10
PULSE
5 Single pulse
2
1
0.5
0.2
0.1
0.01
0.1 1 10 100
PULSE WIDTH : Tw (ms)
1000
Fig.5 Surge current characteristics
0.01µF
D.U.T.
PULSE GENERATOR
OUTPUT 50
5k
50
SAMPLING
OSCILLOSCOPE
Fig. 6 Reverse recovery time (trr) measurement circuit


Part Number ISS133
Description Switching diode
Maker ETC
Total Page 2 Pages
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