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IXFX44N50F Datasheet Preview

IXFX44N50F Datasheet

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die

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HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
Single MOSFET Die
IXFX 44N50F
IXFK 44N50F
VDSS = 500 V
ID25 = 44 A
RDS(on) = 120 m
trr 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
Test Conditions
Maximum Ratings
PLUS 247TM (IXFX)
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
500 V
500 V
±20 V
±30 V
44 A
184 A
44 A
60 mJ
2.5 J
10 V/ns
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
6g
10 g
Test Conditions
V = 0 V, I = 250uA
GS D
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
3.0 5.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
120 m
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l 13.5 MHz industrial applications
l Pulse generation
l Laser drivers
l RF amplifiers
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98731A (01/02)




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IXFX44N50F Datasheet Preview

IXFX44N50F Datasheet

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die

No Preview Available !

Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25 Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
22 32
5500
990
330
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 (External)
23
18
53
8
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
162
56
70
nC
nC
nC
0.26 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
44 A
164 A
1.5 V
trr 250 ns
QRM
IF = 25 A,-di/dt = 100 A/µs, VR = 100 V
1.0 µ C
I
RM
8A
IXFK 44N50F
IXFX 44N50F
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXFX44N50F
Description HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
Maker ETC
Total Page 2 Pages
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