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L29S800F Datasheet Preview

L29S800F Datasheet

8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY

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L29S800F
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
PRELIMINARY
A
Rev. No. Approved date
A July 17 2002
Revision history
History
Initial issue
Remark (purpose)
Preliminary
1 071802




ETC

L29S800F Datasheet Preview

L29S800F Datasheet

8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY

No Preview Available !

LinkSmart
L29S800F
8MEGABIT (1M×8 /512K×16)
3 VOLT CMOS FLASH MEMERY
PRELIMINARY
A
! FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/ BY )
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector Protect command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
*: Embedded EraseTMand Embedded Program TM are trademarks of Advanced Micro Devices, Inc.
2 071802


Part Number L29S800F
Description 8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY
Maker ETC
Total Page 30 Pages
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