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N Channel MOSFET 1.0A
M01N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE
Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature
1.Gate 2.Drain 3.
M01N60 Datasheet
