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MT4953 Datasheet Preview

MT4953 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MT4953
Description
The MT4953 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
* Simple Drive Requirement
BVDSS
- 30 V
* Lower on-resistance
RDS(ON)
53 mΩ
* Fast Switching
ID - 5 A
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Total Power Dissipation1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
o perating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient1
Max.
Symbol
Rthj-amb
Ratings
-30
+/- 16
-5
-4
-20
2
0.02
-55~+150
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
MT4953
Page: 1/7
Datasheet pdf - http://www.DataSheet4U.net/




ETC

MT4953 Datasheet Preview

MT4953 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet.co.kr
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Electrical Characteristics (Tj = 25unless otherwise specified)
MT4953
Source-Drain Diode
Notes: 1. Surface Mounted on FR4 Board, t10sec.
2. Pulse width300us, duty cycle2%.
MT4953
Page: 2/7
Datasheet pdf - http://www.DataSheet4U.net/


Part Number MT4953
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker ETC
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MT4953 Datasheet PDF





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