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MZC400TS60U Datasheet Preview

MZC400TS60U Datasheet

Fast Recovery Epitazial Diode

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MZC400TS60U

PRELIMINARY MZK400TS60U
Fast Recovery Epitaxial Diode INT-A -PAK
Ultra-FastTM Speed FRED
Features
www.DataSheet4U.c·om International standard package
With DBC ceramic base plate
· Planar passivated chips
· Short recovery time
· Low switching losses
· Ultra-soft recovery behaviour
· Industry standard package
· UL recongnition pending
MZC
MZK
VRRM = 600V
IFAVM = 400A
trr = 250ns
Benefits
· Antiparallel diode for high frequency
switching devices
· Increased operating efficiency
· Direct mounting to heatsink
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
· Low voltage peaks for reduced
protection circuits
Absolute Maximum Ratings
Symbol
VRSM & VRRM
IFRMS
IFAVM
IFRM
IFSM
I2t
VISOL
PD
TJ
TSTG
Test Conditions
TC=75oC
TC=75 oC; rectangular, d=0.5
tp<10µs; rep. rating, pulse width limited by TVJM
TVJ=45 oC; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
TVJ=150 oC; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
TVJ=45 oC; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
TVJ=150 oC; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
RMS Isolation Voltage, Any Terminal To Case, t=1 min
TC=25 oC
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
560
400
2185
3300
3600
2880
3180
38400
39100
31100
31800
2500
1008
-40 to +150
-40 to +125
Units
V
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
V
W
oC




ETC

MZC400TS60U Datasheet Preview

MZC400TS60U Datasheet

Fast Recovery Epitazial Diode

No Preview Available !

MZC400TS60U
MZK400TS60U
Termal / Mechanical Characteristics
Parameter
RθJS
Termal Resistance, Junction-to- Sink DC
RθJC
Termal Resistance, Junction-to- Case DC
www.DataSheet4RUθ.CcSom
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
Typ.
-
-
0.08
-
-
200
Max.
0.202
0.122
-
4.0
3.0
-
Units
oC/W
N.m
g
Electrical Characteristics (unless otherwise specified)
VRRM
IR
Parameter
Reverse Breakdown Voltage
Diode Leaking Current
VF Diode Forward Voltage
VTO For power-loss calculations only
r6
trr@TVJ=100 oC Diode Reverse Recovery Time
IRM@TVJ= 25 oC Diode Peak Reverse Current
IRM@TVJ=100 oC Diode Peak Reverse Current
Case Outline - Int-a-pak
Min.
600
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
250
-
-
Max.
-
16
5
100
1.17
1.36
1.41
1.52
0.85
1.14
300
66
110
Units Conditions
V IR=16mA
mA TVJ=25 oC VR=VRRM
mA TVJ=25 oC VR=0.8VRRM
mA TVJ=125 oC VR=0.8VRRM
V IF=230A; TVJ=125 oC
V TVJ= 25 oC
V IF=400A; TVJ=125 oC
V TVJ= 25 oC
V
m
ns IF=400A
A VR=300V
A -di/dt=600A/µs
Dimensions are shown in millimeters
2


Part Number MZC400TS60U
Description Fast Recovery Epitazial Diode
Maker ETC
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