NDS9405 Description
These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as...
NDS9405 Key Features
- 4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V