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OP294 Datasheet Preview

OP294 Datasheet

GaAlAs Plastic Infrared Emitting Diode

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Product Bulletin OP294
June 1996
GaAlAs Plastic Infrared Emitting Diode
Types OP294, OP299
Features
Characterized at 5mA for battery
operated systems or other low drive
current systems
Wide irradiance pattern (OP294) or
narrow irradiance pattern (OP299)
Significantly higher power output than
GaAs at equivalent drive currents
Wavelength matched to silicon’s peak
response
T-1 3/4 package
Description
The OP294 and OP299 are gallium
arsenide infrared emitting diodes
designed for low current or power limited
applications (such as battery supplies).
These LEDs are similar in design to the
OP290 and OP295 but use a smaller
chip which increases output
efficiency at low current levels by
increasing current density. Light output
can be maximized with continuous (d.c.)
forward current up to 100mA or with
pulsed forward current operation up to
750 mA. The chip is mounted in an IR
transmissive plastic package and has
been designed and tested for use with
OP593/598 phototransistors or similar
photodetector.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.80 mW/o C above 25o C.
(3) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and 1.429" (36.3 mm) from the measurement surface. Ee(APT) is not necessarily
uniform within the measured area.
(4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and .500" (12.7 mm) from the measurement surface. Ee(APT) is not necessarily
uniform within the measured area.
(5) Cathode lead is 0.070" nominal shorter than anode lead.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
2-56
(972) 323-2200
Fax (972) 323-2396




ETC

OP294 Datasheet Preview

OP294 Datasheet

GaAlAs Plastic Infrared Emitting Diode

No Preview Available !

Types OP294, OP299
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
Ee(APT) Apertured Radiant Incidence
OP294
OP299
VF Forward Voltage
IR Reverse Current
λp Wavelength at Peak Emission
B Spectral Bandwidth Between Half Power Points
∆λp/T Spectral Shift with Temperature
θHP Emission Angle at Half Power Points
OP294
OP299
tr Output Rise Time
tf Output Fall Time
MIN
0.50
0.15
TYP MAX UNITS TEST CONDITIONS
1.50 mW/cm2 IF = 5 mA(4)
0.45 mW/cm2 IF = 5 mA(3)
1.50 V IF = 5 mA
10 µA VR = 2 V
890 nm IF = 10 mA
80
+0.18
nm IF = 10 mA
nm/o C IF = Constant
50 Deg. IF = 10 mA
20 Deg. IF = 10 mA
500 ns IF(PK) = 100 mA,
250 ns PW = 10 µs, D.C. = 10%
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
2-57


Part Number OP294
Description GaAlAs Plastic Infrared Emitting Diode
Maker ETC
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OP294 Datasheet PDF






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