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GaAs Infrared Emitter C
OPE5594A
8.7 5.7 7.7
5.0 1.3 Max
The OPE5594S is GaAlAs infrared emitting diode
DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
24.0 Min 2.0
FEATURESC
• High-output powerC • Narrow beam angle • High reliability and long term stability • Available for pulse operating C
APPLICATIONSC
• Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission
2- 0.5
2.5 Anode Cathode
Tolerance : ±0.
OPE5594A Datasheet
