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P12N60 - HGTP12N60

Description

The IGBT is a MOS gated high voltage switching device combining the best

Features

  • 12A, 600V.
  • Latch Free Operation.
  • Typical Fall Time.

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Datasheet preview – P12N60

Datasheet Details

Part number P12N60
Manufacturer Unknown Manufacturer
File Size 67.03 KB
Description HGTP12N60
Datasheet download datasheet P12N60 Datasheet
Additional preview pages of the P12N60 datasheet.

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    Full PDF Text Transcription

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    HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
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