Full PDF Text Transcription for PJ2N9014 (Reference)
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www.DataSheet4U.com PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • • High total power dissipation (PT=450mW) High hFE and good linearity Co...
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High total power dissipation (PT=450mW) High hFE and good linearity Complementary to PJ2N9015 TO-92 SOT-23 • ABSOLUTE MAXIMUM RATINGS (T a= 25 °C ) Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 50 45 5 100 450 150 -55 ~150 Uint V V V mA mW °C °C P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2.Emitter 3.