PJ2N9014
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PJ2N9014 NPN Epitaxial Silicon Transistor
PRE-APLIFIER, LOW LEVEL&LOW NOISE
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High total power dissipation (PT=450m W) High h FE and good linearity plementary to PJ2N9015
TO-92
SOT-23
- ABSOLUTE MAXIMUM RATINGS (T a= 25 °C )
Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Value 50 45 5 100 450 150 -55 ~150 Uint V V V m A m W °C °C
P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2.Emitter 3.Collector
ORDERING INFORMATION
Device PJ2N9014CT PJ2N9014CX Operating Temperature -20℃～+85℃ Package TO-92 SOT-23
ELECTRICAL CHARACTERISTICS (T a= 25 °C )
Characte ristic
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output...
