SKI-FF530 Description
.. .. 1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ).
- Part: SKI-FF530
- Manufacturer: Unknown Manufacturer
- Size: 186.51 KB
SKI-FF530 is Infrared emitting diode which mounted high power 850 nm IR CHIP manufactured by Unknown Manufacturer.
.. .. 1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ).