SMT850N Datasheet | Unknown Manufacturer

Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Chip Dimension (3) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens High Performance Infrared TOP IR LED SMT850N consists of an Al Ga As LED mounted on the lead frame as TOP LED package and is 20m W typical of output power. It emits a spectral band of radiation at 850nm. Outer dimension (Unit: mm) TOP IR LED SMT850N Al Ga As 0.4mm- 0.4mm 850nm typ. Silver Plated PPA Resin Epoxy Resin Electro-Optical Characteristics [Ta=25°C] Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 m W Ta=25°C Forward Current IF 100 m A Ta=25°C Pulse Forward Current IFP 1,000 m A Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature -30 ~ +80 °C TSTG Soldering Temperature TSOL 240 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be pleted within 3 seconds at 230°C Electro-Optical .. Item Characteristics [Ta=25°C] Symbol Condition Minimum IF=50m A DC Forward Voltage VF IF=100m A, tp=20ms Reverse Current IR VR=5V IF=50m A DC 15.0 Total Radiated Power PO IF=100m A, tp=20ms IF=50m A DC Radiant Intensity IE IF=100m A, tp=20ms Peak Wavelength IF=50m A DC 840 P Half Width IF=50m A DC Viewing Half Angle IF=50m A DC Rise Time tr IF=50m A DC Fall Time tf IF=50m A DC ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Marubeni America Corporation 3945 Freedom Circle, Suite 1000, Santa Clara, CA 95054 408-330-0650 (Ext. 323), 408-330-0655 (Fax), sales@tech-led. Typical 1.45 1.50 20.0 40.0 10 20 850 40 ±55 15 10 Maximum 1.60 1.8 10 Unit V u A m W m W/sr 860 nm nm deg. ns...