SMW200-26C
Description
The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter.
Key Features
- Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
- Gate voltage rating : ±30 V
- Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
- Avalanche capability ratings (TO-3P)
