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WS512K32BV - 512Kx32 3.3V SRAM MODULE

Description

I/O0-31 A0-18 WE1-4 CS1-4 I/O29 I/O28 A0 A1 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected OE VCC GND NC BLOCK DIAGRAM A2 WE1 CS 1 WE2 CS2 WE3 CS 3 WE 4CS4 I/O23 I/O22 OE A0-18 512K x 8 512K x 8 512K x 8 512K x 8 I/O21 I/O20 66 I

Features

  • s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging.
  • 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402).
  • 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8 s Radiation Tolerant with Epitaxial Layer Die s s s s s Commercial, Industrial and Military Temperature Ranges 3.3 Volt.

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Datasheet Details

Part number WS512K32BV
Manufacturer Unknown Manufacturer
File Size 170.32 KB
Description 512Kx32 3.3V SRAM MODULE
Datasheet download datasheet WS512K32BV Datasheet
Additional preview pages of the WS512K32BV datasheet.

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Full PDF Text Transcription

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WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE FEATURES s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402) • 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8 s Radiation Tolerant with Epitaxial Layer Die s s s s s Commercial, Industrial and Military Temperature Ranges 3.
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