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High Voltage Transistors
NPN Silicon
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
1 BASE
Value 140 160 6.0 600
2 EMITTER
Unit Vdc Vdc Vdc mAdc
MMBT5550LT1 MMBT5551LT1
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.
MMBT5550LT1 Datasheet
