WNM2030-3 mosfet equivalent, n-channel mosfet.
* 20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) @VGS=2.5V
* High density cell design for low RDS(on)
* Material: Halogen free
* Reliable and ru.
* PWM applications
* Load switch
* Power management in portable/desktop PCs
* DC/DC conversion
4. Orde.
The WNM2030-3/TR-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standa.
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