2SC1972 transistor equivalent, silicon npn epitaxial planar type transistor.
* High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
* Emitter ballasted construction for reliability and performance.
* Manufactured incorporati.
Features
* High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz
* Emitter ballasted construction fo.
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