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13001 - NPN Epitaxial Silicon Transistor

Features

  • Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3. Base Electrical Characteristics (TA=25oC) Characteristic Collector-Base Breakdown.

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Datasheet Details

Part number 13001
Manufacturer Elite
File Size 60.13 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet 13001 Datasheet

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Full PDF Text Transcription

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13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 600 400 7 200 1000 150 -55~+150 Unit V V V mA mW o o C C 1. Emitter 2. Collector 3.
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