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D880 Datasheet

NPN Epitaxial Silicon Transistor

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D880
NPN Epitaxial Silicon Transistor
LOW FREQUENCY POWER AMPLIFIER
Complement to B834
Collector-Emitter Voltage: VCEO=150V
Collector Dissipation: PC(max)=30W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
60
60
7
3
30
150
-55~+150
V
V
V
A
W
oC
oC
TO-220
1. Base 2. Collector 3. Emitter
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
BVCEO
IEBO
ICBO
hFE(1)
hFE(2)
VCE(SAT)
VBE(ON)
fT
COB
tON
tSTG
tF
IC=50mA, IB=0
VEB=7V, IC=0
VCB=60V, IE=0
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IC=3A, IB=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=1A
IB1=-IB2=0.2A
RL=30
Min Typ Max Unit
60 V
100 A
100 A
60 300
20
0.4 1
V
0.7 1
V
3 MHz
70 pF
0.8 s
1.5 s
0.8 s
hFE CLASSIFICATION
Classification
hFE1
O
60 – 120
Y
100 - 200
G
150 -300
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
Part No.: D880
Page: 1 / 1
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Part Number D880
Description NPN Epitaxial Silicon Transistor
Maker Elite
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D880 Datasheet PDF





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