M32L1632512A Datasheet - Elite Semiconductor

M32L1632512A 256K x 32-Bit x 2-Bank SGRAM

The M32L1632512A is 16, 777, 216 bits synchronous high data rate Dynamic RAM organized as 2 x 262, 144 words by 32 bits, fabricated with ESMT’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock.

M32L1632512A Features

* at 3.3V power supply y JEDEC standard y LVTTL .D compatible with multiplexed address w bank / Pulse RAS y Dual yw MRS cycle with address key programs w - CAS Latency ( 2, 3 ) y y y y y y - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the

M32L1632512A_EliteSemiconductor.pdf