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N2SV12816FS-6K/75B N2SV6H16FS-6K/75B 64Mb/128Mb Synchronous DRAM Features
• • • • • • • Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8, Full page Programmable Wrap: Sequential or Interleave Burst Read with Single Write Operation Automatic and Controlled Precharge Command • • • • • • Dual Data Mask for byte control (x16) Auto Refresh and Self Refresh 64ms refresh period (4K cycle) JEDEC standard 3.3V Power Supply LVTTL compatible Package: 54-pin TSOP (II)
Description
The N2SV6H16FS is four-bank Synchronous DRAMs organized as 1Mbit x 16 I/O x 4 Bank, and N2SV12816FS organized as 2 Mbit x 16 I/O x 4 Bank.