N2SV6H16FS-75B - SDRAM

This page provides the datasheet information for the N2SV6H16FS-75B, a member of the N2SV6H16FS-6K SDRAM family.

Description

The N2SV6H16FS is four-bank Synchronous DRAMs organized as 1Mbit x 16 I/O x 4 Bank, and N2SV12816FS organized as 2 Mbit x 16 I/O x 4 Bank.

Features

Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8, Full page Programmable Wrap: Sequential or Interleave Burst Read with Single Write Operation Automatic and Controlled Precharge Command.
Dual Data Mask for byte control (x16) Auto Refresh and Self Refresh 64ms ref.

Elixir

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Datasheet Details

Part number	N2SV6H16FS-75B
Manufacturer	Elixir
File Size	108.49 KB
Description	SDRAM
Datasheet	N2SV6H16FS-75B Datasheet
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www.DataSheet4U.com N2SV12816FS-6K/75B N2SV6H16FS-6K/75B 64Mb/128Mb Synchronous DRAM Features • • • • • • • Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8, Full page Programmable Wrap: Sequential or Interleave Burst Read with Single Write Operation Automatic and Controlled Precharge Command • • • • • • Dual Data Mask for byte control (x16) Auto Refresh and Self Refresh 64ms refresh period (4K cycle) JEDEC standard 3.3V Power Supply LVTTL compatible Package: 54-pin TSOP (II) Description The N2SV6H16FS is four-bank Synchronous DRAMs organized as 1Mbit x 16 I/O x 4 Bank, and N2SV12816FS organized as 2 Mbit x 16 I/O x 4 Bank.

Published: Nov 7, 2007 |