E5108AGBG Elpida Memory Datasheet

E5108AGBG Key Features

• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better mand and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality