E5108ASE Elpida Memory Datasheet

E5108ASE Key Features

• Power supply: VDD, VDDQ = 1.8V ± 0.1V
• Double-data-rate architecture: two data transfers per clock cycle
• Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data
• DQS is edge aligned with data for READs: centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• mands entered on each positive CK edge: data and data mask referenced to both edges of DQS
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• Burst lengths: 4, 8