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Elpida Memory

EDR2518ABSE Datasheet Preview

EDR2518ABSE Datasheet

288M bits Direct Rambus DRAM

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PRELIMINARY DATA SHEET
288M bits Direct RambusDRAM
EDR2518ABSE (512K words × 18 bits × 32s banks)
Description
The EDR2518AB (Direct RDRAM) is a general
purpose high-performance memory device suitable for
use in a broad range of applications including
computer memory, graphics, video, and any other
application where high bandwidth and low latency are
required.
The EDR2518AB is 1066MHz 288Mbits Direct Rambus
DRAM (RDRAM), organized as 16M words by 18 bits.
The use of Rambus Signaling Level (RSL) technology
permits 800MHz to 1066MHz transfer rates while using
www.DataSchoenevt4eUn.tcioonmal system and board design technologies.
Direct RDRAM devices are capable of sustained data
transfers at 0.9375ns per two bytes (7.5ns per sixteen
bytes).
The architecture of the Direct RDRAM devices allows
the highest sustained bandwidth for multiple,
simultaneous randomly addressed memory
transactions.
The separate control and data buses with independent
row and column control yield over 95% bus efficiency.
The Direct RDRAM devices 32 banks support up to
four simultaneous transactions.
System oriented features for mobile, graphics and
large memory systems include power management,
byte masking.
It is offered in a CSP horizontal package suitable for
desktop as well as low-profile add-in card and mobile
applications. Direct RDRAM devices operate from a
2.5V supply.
Features
Highest sustained bandwidth per DRAM device
— 2.1 GB/s sustained data transfer rate
— Separate control and data buses for maximized
efficiency
— Separate row and column control buses for easy
scheduling and highest performance
— 32 banks: four transactions can take place
simultaneously at full bandwidth data rates
Low latency features
— Write buffer to reduce read latency
— 3 precharge mechanisms for controller flexibility
— Interleaved transactions
Advanced power management:
— Multiple low power states allows flexibility in power
consumption versus time to active state
— Power-down self-refresh
Organization: 2K bytes pages and 32 banks, x 18
Uses Rambus Signaling Level (RSL) for up to
1066MHz operation
FBGA (µ BGA) package is Sn-Pb or lead free
solder (Sn-Ag-Cu)
Document No. E0260E40 (Ver. 4.0)
Date Published April 2003 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2003




Elpida Memory

EDR2518ABSE Datasheet Preview

EDR2518ABSE Datasheet

288M bits Direct Rambus DRAM

No Preview Available !

EDR2518ABSE
Ordering Information
Part number
Organization*
words × bits × Internal
Banks
Clock frequency
MHz (max.)
/RAS access
time (ns)
Package
EDR2518ABSE-AEP
EDR2518ABSE-AE
EDR2518ABSE-AD
EDR2518ABSE-8C
512K x 18 x 32s
1066
1066
1066
800
32 (-32P)
32 (-32)
35
40
80-ball FBGA (µBGA)
EDR2518ABSE-AEP-E
EDR2518ABSE-AE-E
EDR2518ABSE-AD-E
EDR2518ABSE-8C-E
1066
1066
1066
800
32 (-32P)
32 (-32)
35
40
Note: The “32s” designation indicates that this RDRAM core is composed of 32 banks which use a “split” bank
architecture
Part Number
E D R 25 18 A B SE - AEP - E
www.DataESlphideaetM4eUm.coorym
Type
D: Monolithic Device
Product Code
R: RDRAM
Density & Bit Organization
2518: 288M (x18 bit)
Voltage, Interface
A: 2.5V, RSL
Environment Code
Blank: Sn-Pb Solder
E: Lead Free
Speed
Package
SE: FBGA
(µBGA with back cover)
AEP: 1066MHz
(tRAC= 32ns,
tDAC= 3clocks)
AE: 1066MHz
(tRAC= 32ns)
Die Rev.
AD: 1066MHz
(tRAC= 35ns)
8C: 800MHz
(tRAC= 40ns)
2 Preliminary Data Sheet E0260E40 (Ver. 4.0)


Part Number EDR2518ABSE
Description 288M bits Direct Rambus DRAM
Maker Elpida Memory
Total Page 30 Pages
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