EM641FT8 Description
CS H L L L OE X L X H WE X H L H I/O0-7 High-Z Data Out Data In High-Z Mode Deselected/ Power down Read Write Selected, Output Disabled Power Stand by Active Active Active Note : (Must be low or high state) 3 EM641FT8 REMENDED DC OPERATING CONDITIONS 1) Parameter Supply voltage Ground Input high voltage Input low voltage.
EM641FT8 Key Features
- Very high speed : 45ns
- Process Technology : 0.15um Full CMOS
- Organization : 512K x8
- Power Supply Voltage => EM641FT8V : 4.5V~5.5V
- Low Data Retention Voltage :1.5V (MIN)
- Three state output and TTL patible
- Packaged product designed for 45/55/70ns
- KGD based on SOP package structure
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um