EMD28164PA Datasheet (8M x 16 Mobile DDR SDRAM) | Emerging Memory

Part: EMD28164PA
Manufacturer: Emerging Memory - Logic Solutions
Size: 825.61 KB

EMD28164PA Key Features

1.8V power supply, 1.8V I/O power
LVCMOS patible with multiplexed address
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
MRS cycle with address key programs
CAS latency (2, 3 & 4)
Burst length (2, 4, 8 & 16)
Burst type (Sequential & Interleave)
Differential clock inputs(CK and /CK)

EMD28164PA Description

This EMD28164PA is 134,217,728 bits synchronous double data rate Dynamic RAM. Each 33,554,432 bits bank is organized as 4,096 rows by 512 columns by 16 bits, fabricated with EMLSI’s high performance CMOS technology. This device uses a double data rate architecture to achieve highspeed operation.