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29LV320 - EN29LV320

Download the 29LV320 datasheet PDF. This datasheet also covers the 29LV320T-70 variant, as both devices belong to the same en29lv320 family and are provided as variant models within a single manufacturer datasheet.

General Description

The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words.

Any word can be programmed typically in 8µs.

Key Features

  • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations.
  • High performance - Access times as fast as 70 ns.
  • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 µA current in standby or automatic sleep mode.
  • Flexible Sector Architecture: - Eight 8-Kbyte sectors, sixty-three 64k-byte sectors. - 8-Kbyte sectors for Top or Bottom boot. - Secto.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (29LV320T-70_EonSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
EN29LV320 EN29LV320 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 µA current in standby or automatic sleep mode. • Flexible Sector Architecture: - Eight 8-Kbyte sectors, sixty-three 64k-byte sectors. - 8-Kbyte sectors for Top or Bottom boot.