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EN29F010 - 1 Megabit (128K x 8-bit) 5V Flash Memory

Description

The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kbytes each.

Any byte can be programmed typically in 7µs.

Features

  • 5.0V operation for read/write/erase operations.
  • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors.
  • High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s.

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Datasheet preview – EN29F010

Datasheet Details

Part number EN29F010
Manufacturer Eon Silicon Solution
File Size 424.22 KB
Description 1 Megabit (128K x 8-bit) 5V Flash Memory
Datasheet download datasheet EN29F010 Datasheet
Additional preview pages of the EN29F010 datasheet.

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Full PDF Text Transcription

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EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory EN29F010 FEATURES • 5.
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