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EN29F010 Datasheet Preview

EN29F010 Datasheet

1 Megabit (128K x 8-bit) 5V Flash Memory

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EN29F010
1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010
FEATURES
5.0V operation for read/write/erase
operations
Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Sector Architecture:
- 8 uniform sectors of 16Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
High performance program/erase speed
- Byte program time: 7µs typical
- Sector erase time: 300ms typical
- Chip erase time: 3s typical
Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform
sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F010 features
5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for
WAIT states in high-performance microprocessor systems.
The EN29F010 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20




Eon Silicon Solution

EN29F010 Datasheet Preview

EN29F010 Datasheet

1 Megabit (128K x 8-bit) 5V Flash Memory

No Preview Available !

TABLE 1. PIN DESCRIPTION
Pin Name
A0-A16
DQ0-DQ7
CE
OE
WE
Vcc
Vss
Function
Addresses
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
Supply Voltage
(5V ± 10% )
Ground
EN29F010
FIGURE 1. LOGIC DIAGRAM
Vcc
A0 - A16
17
CE
OE
WE
EN29F010
8
DQ0 - DQ7
Vss
TABLE 2. SECTOR ARCHITECTURE
Sector
ADDRESSES
SIZE (Kbytes)
A16
A15
A14
7 1C000h - 1FFFFh 16 1 1 1
6 18000h – 1BFFFh
16
110
5 14000h – 17FFFh 16 1 0 1
4 10000h – 13FFFh 16 1 0 0
3 0C000h – 0FFFFh
16
011
2 08000h – 0BFFFh
16
010
1 04000h - 07FFFh 16 0 0 1
0 00000h - 03FFFh 16 0 0 0
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/10/20


Part Number EN29F010
Description 1 Megabit (128K x 8-bit) 5V Flash Memory
Maker Eon Silicon Solution
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