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EN29F010

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

EN29F010 datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

EN29F010 datasheet preview

EN29F010 Datasheet Details

Part number EN29F010
Datasheet EN29F010-EonSiliconSolution.pdf
File Size 424.22 KB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010 page 2 EN29F010 page 3

EN29F010 Overview

The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs.

EN29F010 Key Features

  • 5.0V operation for read/write/erase operations
  • Fast Read Access Time
  • 45ns, 55ns, 70ns, and 90ns
  • Sector Architecture
  • 8 uniform sectors of 16Kbytes each
  • Supports full chip erase
  • Individual sector erase supported
  • Sector protection
  • High performance program/erase speed
  • Byte program time: 7µs typical
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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EN29LV320 32M Flash Memory Boot Sector Flash Memory
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EN29F010 Distributor

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