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EN71SN10F - 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip

ESMT (Elite Semiconductor Microelectronics Technology)

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EN71SN10F 1.8v nand flash + 1.8v mobile ddr sdram multi-chip by ESMT (Elite Semiconductor Microelectronics Technology) - Datasheet Preview

Datasheet Details

Part number	EN71SN10F
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	4.04 MB
Description	1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip
Datasheet	EN71SN10F Datasheet

Overview

EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip.

Key Features

Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit.
Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm.
Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V.
Operating Temperature :-25 °C to +85 °C NAND FLASH.
Voltage Supply: 1.8V (1.7V ~ 1.95V ).
Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8.

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