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S1L50000 Datasheet - Epson

HIGH DENSITY GATE ARRAY

S1L50000 Features

* Process Integration Operating Speed 0.35µm 2/3/4 layer metalization CMOS process A maximum of 815,468 gates (2 input NAND gate equivalent) Internal gates: 140 ps (3.3V Typ), 210 ps (2.0V Typ) (2-input pair NAND, F/O = 2, Typical wire load) Input buffer: 380 ps (5.0V T

S1L50000 Datasheet (121.68 KB)

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Datasheet Details

Part number:

S1L50000

Manufacturer:

Epson

File Size:

121.68 KB

Description:

High density gate array.

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