* q q q q q Super-high density (adopting 0.45µm silicon gate CMOS with 2- and 3-metal layers) High-speed operation (operation delay of internal gate = 0.160ns at 3.3V, 2-input power NAND standard) Internal gate = 3.3 and 3.0V (2.0V single), I/O buffer = 5.0, 3.3 and 3.0V (2.0V single) (built-in level
SLA4318
Epson
58.68 KB
(sla40000 series) high density gate array.
PF842-02 SLA40000 Series High Density Gate Array q Super-high-density/speed gate array q Operates on 3.3 and 3.0V power source (level shifter is pre-.
📁 Related Datasheet
SLA4310 PNP NPN H-bridge (Sanken electric)
SLA4313 NPN PNP Silicon Epitaxial Planar (Sanken electric)
SLA431T (SLA40000 Series) High Density Gate Array (Epson)
SLA4340 PNP + NPN Darlington H-bridge (Sanken electric)
SLA4342 Silicon NPN / PNP (Sanken)
SLA4390 PNP+NPN Darlington (Sanken electric)
SLA4391 PNP NPN Darlington H-bridge (Sanken electric)
SLA40000 (SLA40000 Series) High Density Gate Array (Epson)
SLA4010 NPN Darlington With built-in avalanche diode (Sanken electric)
SLA4028 High Density Gate Array (Seiko Epson Corp)
