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SLA441T Datasheet (SLA40000 Series) High Density Gate Array

Manufacturer: Epson

Overview: PF842-02 SLA40000 Series High Density Gate Array q Super-high-density/speed gate array q Operates on 3.3 and 3.0V power source (level shifter is pre-installed) q Raw of gates: 28 to 411k gates (sea of gates) s OVERVIEW The SLA 40000 series are super-high-density/speed, Sea-of-gate type CMOS gate arrays adopting the 0.45É m process. They consume less electricity, a feature of ASICs dedicated to 3.3V, while enabling high-speed-operation as well as 3V/5V full swing I/F in the level shifter. There are 2- and 3-metal layer for each of 8 models from 28,260 to 411,257 gates, satisfying customer needs for a wide range of circuit size. In addition, the series can be used with various I/F devices such as low noise output cells, PCI I/F revision 2.0, GTL I/F*, JTAG*, fail/safe output* and test control input*, and have diverse applications such as small information instrument and for image processing. To develop high-speed/high-density circuits in a shorter period of time, the series enable diverse design techniques to be used during development such as high accuracy simulation of interconnection resistance and blunted waveform in addition to the conventional interconnection capacity components, and provide a new layout tool for reducing clock skew.

Download the SLA441T datasheet PDF. This datasheet also includes the SLA40000 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number SLA441T
Manufacturer Epson
File Size 58.68 KB
Description (SLA40000 Series) High Density Gate Array
Download SLA441T Download (PDF)

Key Features

  • q q q q q Super-high density (adopting 0.45µm silicon gate CMOS with 2- and 3-metal layers) High-speed operation (operation delay of internal gate = 0.160ns at 3.3V, 2-input power NAND standard) Internal gate = 3.3 and 3.0V (2.0V single), I/O buffer = 5.0, 3.3 and 3.0V (2.0V single) (built-in level shifter) Low power consumption (0.80µW/MHz/BC when internal cell = 3.0V) Output drivability (IOL = 100µ, 1, 3, 6, 12, 24 mA when PCI = 5.0V, IOL = 100µ, 1, 2, 6, 12mA when PCI = 3.3V, IOL = 50µ, 300µ,.