Datasheet4U Logo Datasheet4U.com

PTB20134 - 30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

PTB20134 Description

e PTB 20134 30 Watts, 860 *900 MHz Cellular Radio RF Power Transistor .
The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz.

PTB20134 Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 30 Watts, 860
* 900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Pas

📥 Download Datasheet

Preview of PTB20134 PDF
datasheet Preview Page 2

Datasheet Details

Part number
PTB20134
Manufacturer
Ericsson
File Size
42.56 KB
Datasheet
PTB20134_Ericsson.pdf
Description
30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

📁 Related Datasheet

  • PTB23001X - NPN microwave power transistors (NXP)
  • PTB23002U - NPN microwave power transistor (NXP)
  • PTB23003X - NPN microwave power transistor (NXP)
  • PTB23005X - NPN microwave power transistors (NXP)
  • PTB23006U - Microwave power transistor (NXP)
  • PTB100 - Low Profile Slide Potentiometer (Bourns)
  • PTB32001X - NPN microwave power transistors (NXP)
  • PTB32003X - NPN microwave power transistors (NXP)

📌 All Tags

Watts 860-900 MHz Cellular Radio Power Transistor Ericsson
Ericsson PTB20134-like datasheet