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FLC257MH-6 Datasheet Preview

FLC257MH-6 Datasheet

C-Band Power GaAs FET

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FLC257MH-6
FEATURES
• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC257MH-6 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS =600mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS =50mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5
Limit
Typ. Max.
1000 1500
500 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6.4 GHz
32.5 34.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 36 -
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 8 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1




Eudyna Devices

FLC257MH-6 Datasheet Preview

FLC257MH-6 Datasheet

C-Band Power GaAs FET

No Preview Available !

FLC257MH-6
C-Band Power GaAs FET
POWER DERATING CURVE
16
12
8
4
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
1000
750
VGS =0V
-0.5V
500 -1.0V
250 -1.5V
-2.0V
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
29 f1 = 6.4 GHz
27
f2 = 6.41GHz
2-tone Test
25 Pout
23
21
IM3
-10
-20
-30
-40
19 -50
12 14 16 18 20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS = +10V
35 IDS 0.6 IDSS
33 f = 6.4 GHz
Pout
31
29
27
25 ηadd
23
50
40
30
20
10
16 18 20 22 24 26
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6.4 GHz
IDS 0.6 IDSS
35
50
34
P1dB
40
ηadd
33 30
8 9 10
Drain-Source Voltage (V)
2


Part Number FLC257MH-6
Description C-Band Power GaAs FET
Maker Eudyna Devices
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