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FLL120MK Datasheet Preview

FLL120MK Datasheet

L-Band Medium & High Power GaAs FET

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FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: ηadd = 40% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL120MK
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
37.5
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2400mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =240mA
IGS = -240µA
-1.0
-5
Limit
Typ. Max.
4000 6000
2000 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS = 0.55 IDSS (Typ.),
f = 2.3GHz
39.5 40.0
9.0 10.0
-
-
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 40 -
%
Thermal Resistance
CASE STYLE: MK
Rth Channel to Case
- 3.3 4.0
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1




Eudyna Devices

FLL120MK Datasheet Preview

FLL120MK Datasheet

L-Band Medium & High Power GaAs FET

No Preview Available !

FLL120MK
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
50
40
30
20
10
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
4000
VGS =0V
3000
-0.5V
2000
-1.0V
1000
0
-1.5V
-2.0V
2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.55 IDSS
f = 2.3 GHz
42
40
38
Pout
36
ηadd
34
32
30
20 22 24 26 28 30 32
Input Power (dBm)
60
40
20
0
2


Part Number FLL120MK
Description L-Band Medium & High Power GaAs FET
Maker Eudyna Devices
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