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FLL57MK Datasheet Preview

FLL57MK Datasheet

L-Band Medium & High Power GaAs FET

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FLL57MK
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 11.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL57MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.2 and -2.2 mA respectively with
gate resistance of 100.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
21.4
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 90mA -1.0
Gate Source Breakdown Voltage VGSO IGS = -90µA
-5
Limit
Typ. Max.
1800 2700
1000 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS = 0.55IDSS (Typ.),
f = 2.3GHz
35.5 36.0 -
10.5 11.5 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 37 -
%
Thermal Resistance
CASE STYLE: MK
Rth Channel to Case
- 6.2 7.0
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1




Eudyna Devices

FLL57MK Datasheet Preview

FLL57MK Datasheet

L-Band Medium & High Power GaAs FET

No Preview Available !

FLL57MK
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
25
20
15
10
5
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
2000
1500
1000
500
0
VGS =0V
-0.5V
-1.0V
-1.5V
-2.0V
2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.55 IDSS
f = 2.3 GHz
36
34 Pout
32
30
ηadd
28
26
60
50
40
30
20
10
18 20 22 24 26 28
Input Power (dBm)
2


Part Number FLL57MK
Description L-Band Medium & High Power GaAs FET
Maker Eudyna Devices
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