Datasheet4U Logo Datasheet4U.com

FLU35XM - L-Band Medium & High Power GaAs FET

General Description

The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range.

This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.

Key Features

  • High Output Power: P1dB=35.5dBm (Typ. ).
  • High Gain: G1dB=12.5dB (Typ. ).
  • High PAE: ηadd=46% (Typ. ).
  • Hermetic Metal/Ceramic (SMT) Package.
  • Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET.

📥 Download Datasheet

Datasheet Details

Part number FLU35XM
Manufacturer Eudyna Devices
File Size 186.43 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLU35XM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available FLU35XM L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.