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FLX207MH-12 - Ku Band Power GaAs FET

Description

The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 32.5dBm(Typ. ) High Gain: G1dB = 7.0dB(Typ. ) High PAE: ηadd = 28%(Typ. ) Proven Reliability Hermetic Metal/Ceramic Package.

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Datasheet Details

Part number FLX207MH-12
Manufacturer Eudyna Devices
File Size 112.70 KB
Description Ku Band Power GaAs FET
Datasheet download datasheet FLX207MH-12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FLX207MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 32.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 28%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 12.
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