EL357
Description
The EL357 contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SMD package.
Key Features
- Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V)
- Isolation voltage between input and output (E357: Viso=3750 Vrms )
- Subminiature type (The volume is small than that of conventional DIP type by as far as 30%)
- Mini-flat package EL357:1-channel type
- Pb free
- The product itself will remain within RoHS compliant version.
