MR4A16B

MR4A16B Key Features

• +3.3 Volt power supply
• Fast 35 ns read/write cycle
• SRAM patible timing
• Unlimited read & write endurance
• Data always non-volatile for >20 years at temperature
• RoHS-pliant small footprint BGA and TSOP2 package
• All products meet MSL-3 moisture sensitivity level
• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
• Improves reliability by replacing battery-backed SRAM