XR-2011 arrays equivalent, high-current darlington transistor arrays.
Peak Inrush Current Capability of 750 mA Internal Protection Diodes for Driving Inductive Loads Excellent Noise Immunity Direct Compatibility with Most Logic Families Opp.
Rela.
The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral protection diodes for drivi.
Image gallery