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1N60 Datasheet Preview

1N60 Datasheet

Schottky Barrier Diode

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1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
tp1 s
Forward continuous current
Storage temperature range
Ta=25
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
VRRM
VRRM
IFSM
IFSM
IF
IF
Tstg
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
www.excel-semi.com
FaxBack +86-512-67606917
Excel Semiconductor
Rev. 3g, 1-Sep-2009
1/3




Excel Semiconductor

1N60 Datasheet Preview

1N60 Datasheet

Schottky Barrier Diode

No Preview Available !

1N60/1N60P
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Test Conditions
IF=1mA
Reverse current
IF=30mA
IF=200mA
VR=15V
Junction capacitance
Reverse recovery time
VR=1V, f=1MHz
VR=10V, f=1MHz
IF=IR=1mA Irr=1mA RC=100
Type Symbol Min Typ Max Unit
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
VF
VF
VF
VF
IR
IR
CJ
CJ
trr
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
0.5
0.5
1.0
1.0
0.5
1.0
1.0
V
V
V
V
μA
μA
pF
pF
ns
www.excel-semi.com
FaxBack +86-512-67606917
Excel Semiconductor
Rev. 3g, 1-Sep-2009
2/3


Part Number 1N60
Description Schottky Barrier Diode
Maker Excel Semiconductor
Total Page 3 Pages
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