ES25P40
Description
Vcc GND Connection Diagrams 8-pin Plastic Small Outline Package (SO) CS# SO 1 2 3 5 6 7 VCC HOLD# SCK W# GND 4 8 SI ES25P40 3 Rev.
Key Features
- 0D May 11 , 2006 E ES S II ADVANCED INFORMATION Excel Semiconductor inc
- GENERAL PRODUCT DESCRIPTION The ES25P40 device is a 3.0 volt (2.7V to 3.6V) single power flash memory device
- ES25P40 consists of Eight sectors, each with 512 Kb memory
- Data appears on SI input pin when inputting data into the memory and on the SO output pin when outputting data from the memory
- designed to be programmed in-system with the standard system 3.0 volt Vcc supply
- The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction
- The memory supports Sector Erase and Bulk Erase instructions
- Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions
- Internally generated and regulated voltages are provided for program operations
- This device does not require Vpp supply
