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MMBZ5257B Datasheet Preview

MMBZ5257B Datasheet

Zener diode

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MMBZ5221B~MMBZ5267B
Zener diode
Features
1. High reliability
2. Wide voltage range available
3. Low reverse current level
4. Small outline package for space savings
5. Surface mount package
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
Tamb75
Type
Symbol
PV
IZ
Tj
Tstg
Value
410
PV/VZ
150
-55~+150
Unit
mW
mA
Maximum Thermal Resistance
Tj=25
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
I=9.5mm(3/8”) TL=constant
RthJA 300 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25
Parameter
Forward voltage
Test Conditions
IF=10mA
Type
Symbol Min Typ Max Unit
VF 0.9 V
www.excel-semi.com
FaxBack +86-512-66607370
Excel Semiconductor
Rev. 3e, 1-Nov-2006
1/4




Excel Semiconductor

MMBZ5257B Datasheet Preview

MMBZ5257B Datasheet

Zener diode

No Preview Available !

MMBZ5221B~MMBZ5267B
Type
Marking
VZnom1)
V
IZT for rzjT
mA Ω
rzjK at
IZK
Ω mA
IR at VR
μA V
TKVZ
%/K
MMBZ5221B 18A 2.4 20 <30 <1200 0.25 <100 1.0 <-0.085
MMBZ5222B 18B 2.5 20 <30 <1250 0.25 <100 1.0 <-0.085
MMBZ5223B 18C 2.7 20 <30 <1300 0.25 <75 1.0 <-0.080
MMBZ5224B 18D 2.8 20 <30 <1400 0.25 <75 1.0 <-0.080
MMBZ5225B 18E 3.0 20 <29 <1600 0.25 <50 1.0 <-0.075
MMBZ5226B
8A
3.3 20 <28 <1600 0.25 <25 1.0 <-0.070
MMBZ5227B
8B
3.6 20 <24 <1700 0.25 <15 1.0 <-0.065
MMBZ5228B
8C
3.9
20
<23 <1900 0.25 <10 1.0 <-0.060
MMBZ5229B
8D
4.3
20
<22 <2000 0.25 <5 1.0 <+0.055
MMBZ5230B
8E
4.7
20 <19 <1900 0.25 <5 2.0 <+0.030
MMBZ5231B
8F
5.1
20 <17 <1600 0.25 <5 2.0 <+0.030
MMBZ5232B
8G
5.6
20
<11 <1600 0.25 <5 3.0 <+0.038
MMBZ5233B
8H
6.0 20
<7 <1600 0.25 <5 3.5 <+0.038
MMBZ5234B
8J
6.2 20
<7 <1000 0.25 <5 4.0 <+0.045
MMBZ5235B
8K
6.8 20
<5 <750 0.25 <3 5.0 <+0.050
MMBZ5236B
8L
7.5 20
<6 <500 0.25 <3 6.0 <+0.058
MMBZ5237B
8M
8.2
20
<8 <500 0.25 <3 6.5 <+0.062
MMBZ5238B
8N
8.7 20
<8 <600 0.25 <3 6.5 <+0.065
MMBZ5239B
8P
9.1
20 <10 <600 0.25 <3 7.0 <+0.068
MMBZ5240B
8Q
10
20 <17 <600 0.25 <3 8.0 <+0.075
MMBZ5241B
8R
11
20 <22 <600 0.25 <2 8.4 <+0.076
MMBZ5242B
8S
12
20 <30 <600 0.25 <1 9.1 <+0.077
MMBZ5243B
8T
13 9.5 <13 <600 0.25 <0.5 9.9 <+0.079
MMBZ5244B
8U
14 9.0 <15 <600 0.25 <0.1 10 <+0.082
MMBZ5245B
8V
15 8.5 <16 <600 0.25 <0.1 11 <+0.082
MMBZ5246B
8W
16
7.8 <17 <600 0.25 <0.1 12 <+0.083
MMBZ5247B
8X
17 7.4 <19 <600 0.25 <0.1 13 <+0.084
MMBZ5248B
8Y
18 7.0 <21 <600 0.25 <0.1 14 <+0.085
MMBZ5249B
8Z
19 6.6 <23 <600 0.25 <0.1 15 <+0.086
MMBZ5250B 81A 20 6.2 <25 <600 0.25 <0.1 16 <+0.086
MMBZ5251B 81B 22 5.6 <29 <600 0.25 <0.1 17 <+0.087
MMBZ5252B 81C 24 5.2 <33 <600 0.25 <0.1 18 <+0.088
MMBZ5253B 81D 25 5.0 <35 <600 0.25 <0.1 19 <+0.089
MMBZ5254B 81E 27 4.6 <41 <600 0.25 <0.1 21 <+0.090
MMBZ5255B 81F 28 4.5 <44 <600 0.25 <0.1 21 <+0.091
MMBZ5256B 81G 30 4.2 <49 <600 0.25 <0.1 23 <+0.091
MMBZ5257B 81H 33 3.8 <58 <700 0.25 <0.1 25 <+0.092
MMBZ5258B
81J
36
3.4 <70 <700 0.25 <0.1 27 <+0.093
MMBZ5259B 81K 39 3.2 <80 <800 0.25 <0.1 30 <+0.094
MMBZ5260B 18F 43 3.0 <93 <900 0.25 <0.1 33 <+0.095
MMBZ5261B 81M 47 2.7 <105 <1000 0.25 <0.1 36 <+0.095
MMBZ5262B 81N 51 2.5 <125 <1100 0.25 <0.1 39 <+0.096
MMBZ5263B 81P 56 2.2 <150 <1300 0.25 <0.1 43 <+0.096
MMBZ5264B 81Q 60 2.1 <170 <1400 0.25 <0.1 46 <+0.097
MMBZ5265B 81R 62 2.0 <185 <1400 0.25 <0.1 47 <+0.097
MMBZ5266B 81S 68 1.8 <230 <1600 0.25 <0.1 52 <+0.097
MMBZ5267B 81T 75 1.7 <270 <1700 0.25 <0.1 58 <+0.098
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL)at 30,
9.5mm(3/8”) from the diode body.
www.excel-semi.com
FaxBack +86-512-66607370
Excel Semiconductor
Rev. 3e, 1-Nov-2006
2/4


Part Number MMBZ5257B
Description Zener diode
Maker Excel Semiconductor
Total Page 4 Pages
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