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EFA720A Datasheet Preview

EFA720A Datasheet

Low Distortion GaAs Power FET

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Excelics
EFA720A
DATA SHEET
Low Distortion GaAs Power FET
+35.5dBm TYPICAL OUTPUT POWER
17.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 7200 MICRON RECESSED
“MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 120mA PER BIN RANGE
 

''
'


 6 *
6*
 

6*6

Chip Thickness: 50 ± 10 microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
MIN
33.5
16.0
TYP
35.5
35.5
17.5
12.5
36
MAX UNIT
dBm
dB
%
Idss Saturated Drain Current Vds=3V, Vgs=0V
1200 2040 2640 mA
Gm Transconductance Vds=3V, Vgs=0V
840 1100
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=20mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=7.2mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=7.2mA
-7 -14
Rth Thermal Resistance (Au-Sn Eutectic Attach)
6
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE 1 CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs Gate-Source Voltage -8V
-4V
Ids Drain Current
Idss
2.4A
Igsf
Forward Gate Current
180mA
30mA
Pin Input Power
34dBm
Tch
Channel Temperature
175oC
Tstg Storage Temperature -65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
23 W
19 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
V
oC/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com




Excelics

EFA720A Datasheet Preview

EFA720A Datasheet

Low Distortion GaAs Power FET

No Preview Available !

EFA720A
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 ---
--- S12 ---
(GHz) MAG ANG MAG ANG MAG ANG
0.500 0.954 -139.8 7.651 105.9 0.018 25.1
1.000 0.950 -160.3 4.004 92.2 0.019 20.5
1.500 0.949 -168.0 2.694 84.8 0.020 22.1
2.000 0.949 -172.3 2.027 79.1 0.020 25.1
2.500 0.949 -175.1 1.624 74.1 0.021 28.5
3.000 0.949 -177.3 1.354 69.5 0.022 32.1
3.500 0.950 -179.1 1.161 65.2 0.023 35.5
4.000 0.950 179.4 1.016 61.0 0.024 38.8
4.500 0.951 178.1 0.903 57.0 0.025 41.8
5.000 0.951 176.9 0.812 53.1 0.026 44.6
5.500 0.952 175.7 0.737 49.3 0.028 47.2
6.000 0.953 174.7 0.675 45.6 0.029 49.5
6.500 0.953 173.6 0.621 42.0 0.031 51.6
7.000 0.954 172.7 0.575 38.5 0.033 53.5
7.500 0.955 171.7 0.535 35.1 0.034 55.2
8.000 0.956 170.7 0.499 31.8 0.036 56.7
8.500 0.957 169.8 0.468 28.6 0.038 58.0
9.000 0.957 168.9 0.439 25.5 0.040 59.1
9.500 0.958 168.0 0.413 22.6 0.042 60.1
10.000 0.959 167.1 0.389 19.7 0.044 61.0
--- S22 ---
MAG ANG
0.664 -173.7
0.680 -176.3
0.685 -177.2
0.689 -177.6
0.692 -177.7
0.696 -177.8
0.700 -177.8
0.704 -177.9
0.709 -177.9
0.715 -178.0
0.720 -178.1
0.726 -178.2
0.733 -178.4
0.739 -178.6
0.746 -178.8
0.753 -179.0
0.760 -179.3
0.767 -179.6
0.774 -180.0
0.782 179.6
Note:
The data included 0.7 mils diameter Au bonding wires:
3 gate wires, 20 mils each; 3 drain wires, 12 mils each; 8 source wires, 7 mils each.


Part Number EFA720A
Description Low Distortion GaAs Power FET
Maker Excelics
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