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Excelics Semiconductor

EFC480C Datasheet Preview

EFC480C Datasheet

Low Distortion GaAs Power FET

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Excelics
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+33.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
High BVgd FOR 10V BIAS
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

 
''


 6 * 6 * 6 
 

Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
f= 2GHz
MIN
32.0
16.0
TYP
33.5
33.5
18.0
12.5
40
MAX UNIT
dBm
dB
%
Idss Saturated Drain Current Vds=3V, Vgs=0V
640 960 1440 mA
Gm Transconductance Vds=3V, Vgs=0V
200 560
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-15 -20
V
BVgs
Rth
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-10 -17
12
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE 1
CONTINUOUS2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids Drain Current
Idss
960mA
Igsf
Forward Gate Current
120mA
20mA
Pin Input Power
32dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Datasheet pdf - http://www.DataSheet4U.net/




Excelics Semiconductor

EFC480C Datasheet Preview

EFC480C Datasheet

Low Distortion GaAs Power FET

No Preview Available !

www.DataSheet.co.kr
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq ---S11---
---S21---
---S12---
---S22---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.500 0.937 -106.2 10.161 120.8 0.022 35.8 0.518 -166.8
1.000 0.897 -134.9 6.389 104.7 0.028 26.4 0.505 -168.3
1.500 0.897 -151.8 4.443 93.5 0.028 21.5 0.524 -171.2
2.000 0.897 -161.0 3.370 85.4 0.029 19.0 0.533 -173.0
2.500 0.898 -167.2 2.695 79.2 0.030 20.2 0.539 -173.8
3.000 0.895 -171.8 2.231 73.9 0.030 19.5 0.542 -174.2
3.500 0.890 -175.4 1.894 69.4 0.030 20.9 0.542 -173.9
4.000 0.850 -176.6 1.654 66.9 0.026 27.6 0.560 -172.2
4.500 0.901 177.7 1.535 59.9 0.032 23.1 0.607 -169.5
5.000 0.899 174.5 1.357 55.2 0.031 25.8 0.617 -170.8
5.500 0.900 172.5 1.208 51.4 0.031 28.1 0.620 -171.8
6.000 0.901 170.8 1.087 48.2 0.031 30.4 0.619 -172.8
6.500 0.902 169.6 0.999 45.8 0.032 32.0 0.616 -172.6
7.000 0.893 168.8 0.941 43.3 0.033 37.1 0.637 -171.2
7.500 0.904 170.7 0.916 39.2 0.037 34.8 0.669 -172.8
8.000 0.919 169.5 0.840 34.2 0.036 35.0 0.681 -175.0
8.500 0.918 169.2 0.783 31.0 0.038 36.6 0.693 -176.9
9.000 0.924 168.7 0.729 27.9 0.037 37.6 0.701 -178.6
9.500 0.927 168.0 0.687 24.5 0.038 39.8 0.706 -179.3
10.000 0.932 167.3 0.647 22.3 0.040 42.4 0.716 179.8
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
Datasheet pdf - http://www.DataSheet4U.net/


Part Number EFC480C
Description Low Distortion GaAs Power FET
Maker Excelics Semiconductor
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