Datasheet Summary
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Excelics
PRELIMINARY DATA SHEET
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- +33.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz High BVgd FOR 10V BIAS 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 80mA PER BIN RANGE
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Low Distortion GaAs Power FET
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ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB pression Vds=8V, Ids=50% Idss Gain at 1dB pression Vds=8V, Ids=50% Idss Gain at 1dB pression...