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Excelics Semiconductor

EIC7179-4 Datasheet Preview

EIC7179-4 Datasheet

Internally Matched Power FET

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UPDATED 08/21/2007
EIC7179-4
7.10-7.90GHz 4-Watt Internally-Matched Power FET
FEATURES
7.10–7.90GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1100mA
Gain at 1dB Compression
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1100mA
Gain Flatness
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1100mA
f = 7.10-7.90GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 7.90GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
35.5 36.5
dBm
7.5 8.5
dB
±0.6
dB
35
1200
1400
%
mA
-43 -46
dBc
2000
-2.5
5.5
2500
-4.0
6.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
48mA
Igr Reverse Gate Current
-9.6mA
Pin Input Power
36dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




Excelics Semiconductor

EIC7179-4 Datasheet Preview

EIC7179-4 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 08/21/2007
EIC7179-4
7.10-7.90GHz 4-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1100mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
8.5GHz
3.0
4.0
5.0
10.0
20
10
0
-10
S21 and S12
DB(|S[2,1]|) *
EIC7179-4
DB(|S[1,2]|) *
EIC7179-4
-0.2
-0.4
S[1,1] *
EIC7179-4
S[2,2] *
EIC7179-4
0.2
0.4
Swp Min
6.5GHz
-20
-30
6.5
7 7.5 8
Frequency (GHz)
8.5
FREQ
(GHz)
6.25
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
8.50
8.75
--- S11 ---
MAG
ANG
0.717 -129.010
0.616 -164.030
0.531
157.650
0.458
116.510
0.405
77.140
0.354
36.120
0.285
-14.050
0.240
-89.650
0.362 -167.970
0.557
140.990
0.698
106.670
--- S21 ---
MAG
ANG
3.341
8.410
3.517
-25.170
3.563
-58.820
3.454
-90.850
3.425 -121.930
3.404 -154.300
3.372
171.750
3.238
134.430
2.854
95.090
2.268
56.400
1.652
22.050
--- S12 ---
MAG
ANG
0.078
-50.550
0.091
-84.550
0.101 -117.910
0.107 -148.130
0.114 -179.030
0.118
149.090
0.122
117.150
0.125
81.280
0.111
42.800
0.091
6.000
0.068
-26.910
--- S22 ---
MAG
ANG
0.258
158.370
0.352
111.870
0.422
78.950
0.460
51.440
0.451
25.010
0.413
-2.990
0.365
-39.080
0.329
-89.170
0.375 -146.450
0.480
167.620
0.568
137.060
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007


Part Number EIC7179-4
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC7179-4 Datasheet PDF





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