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Excelics Semiconductor

EIC7179-5 Datasheet Preview

EIC7179-5 Datasheet

Internally Matched Power FET

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UPDATED 08/21/2007
EIC7179-5
7.10-7.90GHz 5-Watt Internally-Matched Power FET
FEATURES
7.10–7.90GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1600mA
Gain at 1dB Compression
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1600mA
Gain Flatness
f = 7.10-7.90GHz
VDS = 10 V, IDSQ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1600mA
f = 7.10-7.90GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 7.90GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
36.5 37.5
dBm
7.5 8.5
dB
±0.6
dB
35
1600
2000
%
mA
-43 -46
dBc
2900
-2.5
5.0
3500
-4.0
5.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
68mA
Igr Reverse Gate Current -13.6mA
Pin Input Power
37dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175C
-65C to +175C
27W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




Excelics Semiconductor

EIC7179-5 Datasheet Preview

EIC7179-5 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 08/21/2007
EIC7179-5
7.10-7.90GHz 5-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1600mA
-3.0
-4.0
-5.0
-10.0
-0.2
-0.4
FREQ
(GHz)
6.25
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
8.50
8.75
S11 and S22
Swp Max
8.5GHz
3.0
4.0
5.0
10.0
S[1,1] *
EIC7179-5
S[2,2] *
EIC7179-5
0.2
0.4
Swp Min
6.5GHz
--- S11 ---
MAG
ANG
0.752
168.140
0.711
136.260
0.659
105.510
0.591
75.820
0.487
46.300
0.320
11.650
0.097
-69.360
0.315
154.860
0.600
114.000
0.769
85.120
0.843
64.260
20
10
0
-10
-20
-30
6.5
S21 and S12
DB(|S[2,1]|) *
EIC7179-5
DB(|S[1,2]|) *
EIC7179-5
7 7.5 8
Frequency (GHz)
8.5
--- S21 ---
MAG
ANG
2.901
-7.820
2.974
-39.130
3.004
-70.350
2.986 -100.630
3.063 -131.620
3.161 -165.600
3.168
156.190
2.860
113.990
2.233
73.400
1.607
38.360
1.123
9.490
--- S12 ---
MAG
ANG
0.073
-64.840
0.081
-97.090
0.088 -127.140
0.096 -156.850
0.103
172.760
0.111
140.350
0.116
103.520
0.108
62.710
0.087
23.160
0.063
-9.110
0.046
-36.130
--- S22 ---
MAG
ANG
0.232 -147.530
0.224
159.760
0.267
117.460
0.322
82.450
0.358
53.770
0.377
21.450
0.364
-18.780
0.326
-72.420
0.323 -131.860
0.379 -178.690
0.455
151.440
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007


Part Number EIC7179-5
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC7179-5 Datasheet PDF





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